We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the TRabi from 7 to 11 μs at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 ± 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.
@article{arxiv.2512.05052,
title = {High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer},
author = {Xander Peetroons and Xunyao Luo and Tsung-Yeh Yang and Normann Mertig and Sofie Beyne and Julien Jussot and Yosuke Shimura and Clement Godfrin and Bart Raes and Ruoyu Li and Roger Loo and Sylvain Baudot and Stefan Kubicek and Shuchi Kaushik and Danny Wan and Takeru Utsugi and Takuma Kuno and Noriyuki Lee and Itaru Yanagi and Toshiyuki Mine and Satoshi Muraoka and Shinichi Saito and Digh Hisamoto and Ryuta Tsuchiya and Hiroyuki Mizuno and Kristiaan De Greve and Charles Smith and Helena Knowles and Andrew Ramsay},
journal= {arXiv preprint arXiv:2512.05052},
year = {2025}
}