We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.
@article{arxiv.1406.3643,
title = {Ion traps fabricated in a CMOS foundry},
author = {K. K. Mehta and A. M. Eltony and C. D. Bruzewicz and I. L. Chuang and R. J. Ram and J. M. Sage and J. Chiaverini},
journal= {arXiv preprint arXiv:1406.3643},
year = {2014}
}