We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled 9Be+ ion held at a distance of 35μm above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.
@article{arxiv.1812.01829,
title = {Multilayer ion trap technology for scalable quantum computing and quantum simulation},
author = {Amado Bautista-Salvador and Giorgio Zarantonello and Henning Hahn and Alan Preciado-Grijalva and Jonathan Morgner and Martina Wahnschaffe and Christian Ospelkaus},
journal= {arXiv preprint arXiv:1812.01829},
year = {2019}
}