A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 μm. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of (99.9−0.2+0.1)% was measured together with a time resolution of (36.4±0.8)ps at the highest preamplifier bias current working point of 150 μA and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.
@article{arxiv.2112.08999,
title = {Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology},
author = {G. Iacobucci and L. Paolozzi and P. Valerio and T. Moretti and F. Cadoux and R. Cardarelli and R. Cardella and S. Débieux and Y. Favre and D. Ferrere and S. Gonzalez-Sevilla and Y. Gurimskaya and R. Kotitsa and C. Magliocca and F. Martinelli and M. Milanesio and M. Münker and M. Nessi and A. Picardi and J. Saidi and H. Rücker and M. Vicente Barreto Pinto and S. Zambito},
journal= {arXiv preprint arXiv:2112.08999},
year = {2022}
}