A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

G. Iacobucci; R. Cardarelli; S. Débieux; F. A. Di Bello; Y. Favre; D. Hayakawa; M. Kaynak; M. Nessi; L. Paolozzi; H. Rücker; DMS Sultan; P. Valerio

doi:10.1088/1748-0221/14/11/P11008

A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

Instrumentation and Detectors 2020-01-29 v1

Authors: G. Iacobucci , R. Cardarelli , S. Débieux , F. A. Di Bello , Y. Favre , D. Hayakawa , M. Kaynak , M. Nessi , L. Paolozzi , H. Rücker , DMS Sultan , P. Valerio

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Abstract

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism.

Keywords

particle detector detector readout electronics

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@article{arxiv.1908.09709,
  title  = {A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology},
  author = {G. Iacobucci and R. Cardarelli and S. Débieux and F. A. Di Bello and Y. Favre and D. Hayakawa and M. Kaynak and M. Nessi and L. Paolozzi and H. Rücker and DMS Sultan and P. Valerio},
  journal= {arXiv preprint arXiv:1908.09709},
  year   = {2020}
}

A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

Abstract

Keywords

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