Related papers: A Novel Design for SRAM Bitcell with 3-Complementa…

Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAM in on-chip caches due to several advantages. These advantages include non-volatility, low leakage, high integration density, and CMOS compatibility. Prior studies have…

Whereas contemporary Error Correcting Codes (ECC) designs occupy a significant fraction of total die area in chip-multiprocessors (CMPs), approaches to deal with the vulnerability increase of CMP architecture against Single Event Upsets…

This paper presents a low cost PMOS-based 8T (P-8T) SRAM Compute-In-Memory (CIM) architecture that efficiently per-forms the multiply-accumulate (MAC) operations between 4-bit input activations and 8-bit weights. First, bit-line (BL)…

This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…

Compute-in-memory (CIM) accelerators for spiking neural networks (SNNs) are promising solutions to enable $\mu$s-level inference latency and ultra-low energy in edge vision applications. Yet, their current lack of flexibility at both the…

Ultra-fast \& low-power superconductor single-flux-quantum (SFQ)-based CNN systolic accelerators are built to enhance the CNN inference throughput. However, shift-register (SHIFT)-based scratchpad memory (SPM) arrays prevent a SFQ CNN…

This paper presents a tutorial and review of SRAM-based Compute-in-Memory (CIM) circuits, with a focus on both Digital CIM (DCIM) and Analog CIM (ACIM) implementations. We explore the fundamental concepts, architectures, and operational…

The landscape of emerging applications has been continually widening, encompassing various data-intensive applications like artificial intelligence, machine learning, secure encryption, Internet-of-Things, etc. A sustainable approach toward…

Spiking Neural Networks (SNNs) have emerged as a biologically inspired alternative to conventional deep networks, offering event-driven and energy-efficient computation. However, their throughput remains constrained by the serial update of…

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

High speed Full-Adder (FA) module is a critical element in designing high performance arithmetic circuits. In this paper, we propose a new high speed multiple-valued logic FA module. The proposed FA is constructed by 14 transistors and 3…

We present experimental results of the cross-section related to cosmic-ray irradiation at ground level for minimum-sized six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories implemented on a 65 nm CMOS standard…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

The Foundation model for image segmentation, Segment Anything (SAM), has been actively researched in various fields since its proposal. Various researches have been proposed to adapt SAM to specific domains, with one notable approach…

Accommodating all the weights on-chip for large-scale NNs remains a great challenge for SRAM based computing-in-memory (SRAM-CIM) with limited on-chip capacity. Previous non-volatile SRAM-CIM (nvSRAM-CIM) addresses this issue by integrating…