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Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce…

Performing data-intensive tasks in the von Neumann architecture is challenging to achieve both high performance and power efficiency due to the memory wall bottleneck. Computing-in-memory (CiM) is a promising mitigation approach by enabling…

Fine-grained sparsity promises higher parametric capacity without proportional per-token compute, but often suffers from training instability, load balancing, and communication overhead. We introduce STEM (Scaling Transformers with…

Spin-Torque-Transfer RAM (STTRAM) is a promising technology however process variation poses serious challenge to sensing. To eliminate bit-to-bit process variation we propose a reference-less, destructive slope detection technique which…

Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann…

In this paper, we study the vulnerability of 5nm node FinFET and nanowire (20nm gate length) and their corresponding SRAM under radiation. Ab initio tools, SRIM, PHITS, and GEANT4, are used to find the Linear Energy Transfer (LET) of…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively…

3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these…

The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field…

Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low…

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from…

Transformers have revolutionized AI in natural language processing and computer vision, but their large computation and memory demands pose major challenges for hardware acceleration. In practice, end-to-end throughput is often limited by…

A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form…

Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform…

We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…

With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower…

Multi-Valued Logic (MVL) has more than one logic level defined to represent data whereas binary logic has 2 logic levels. It has been shown that the MVL circuits use the circuit resources more effectively at different voltage levels with…