Related papers: A Novel Design for SRAM Bitcell with 3-Complementa…

The continuous shift of computational bottlenecks to the memory access and data transfer, especially for AI applications, poses the urgent needs of re-engineering the computer architecture fundamentals. Many edge computing applications,…

Triangle counting (TC) is a fundamental problem in graph analysis and has found numerous applications, which motivates many TC acceleration solutions in the traditional computing platforms like GPU and FPGA. However, these approaches suffer…

In-memory computing (IMC) can eliminate the data movement between processor and memory which is a barrier to the energy-efficiency and performance in Von-Neumann computing. Resistive RAM (RRAM) is one of the promising devices for IMC…

Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for…

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…

Advanced nodes decouple contacted poly pitch (CPP) and lower-metal pitch to improve routability. We present CPCell, an efficient standard-cell layout generation framework, to support arbitrary gear ratio (GR) and offset parameters through a…

Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET. The CS TFET line-tunneling current increases significantly…

A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…

The continuing advancement of memory technology has not only fueled a surge in performance, but also substantially exacerbate reliability challenges. Traditional solutions have primarily focused on improving the efficiency of protection…

Modern DRAM modules are often equipped with hardware error correction capabilities, especially for DRAM deployed in large-scale data centers, as process technology scaling has increased the susceptibility of these devices to errors. To…

Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored memory states in emerging memory systems. In this work, we present four novel sense amplifier (SA) topologies based on phase transition material…

Recently DRAM-based PIMs (processing-in-memories) with unmodified cell arrays have demonstrated impressive performance for accelerating AI applications. However, due to the very restrictive hardware constraints, PIM remains an accelerator…

In this work, we propose a novel differential photonic static random access memory (pSRAM) bitcell design using fabrication-friendly photonic components. The proposed pSRAM overcomes the key limitations of traditional electrical SRAMs,…

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by…

Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achieve high-performance CIM remains a challenging task. Here, we…

Security and energy-efficiency are critical for computing applications in general and for edge applications in particular. Digital in-Memory Computing (IMC) in SRAM cells have widely been studied to accelerate inference tasks to maximize…

Transformer-based models have revolutionized the field of image super-resolution (SR) by harnessing their inherent ability to capture complex contextual features. The overlapping rectangular shifted window technique used in transformer…

Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and…

The growing prevalence of data-intensive workloads, such as artificial intelligence (AI), machine learning (ML), high-performance computing (HPC), in-memory databases, and real-time analytics, has exposed limitations in conventional memory…

Continuous phase modulation (CPM) with 1-bit quantization at the receiver is promising in terms of energy and spectral efficiency. In this study, CPM waveforms with symbol durations significantly shorter than the inverse of the signal…