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The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…

During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a few factors of DRAM. Nevertheless, the latency-sensitive nature…

The increasing computational demand of Convolutional Neural Networks (CNNs) necessitates energy-efficient acceleration strategies. Compute-in-Memory (CIM) architectures based on Resistive Random Access Memory (RRAM) offer a promising…

A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on…

As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…

The in-memory computing paradigm with emerging memory devices has been recently shown to be a promising way to accelerate deep learning. Resistive processing unit (RPU) has been proposed to enable the vector-vector outer product in a…

In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However,…

In-memory computing on a reconfigurable architecture is the emerging field which performs an application-based resource allocation for computational efficiency and energy optimization. In this work, we propose a Ferroelectric…

Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFETs by quantum transport simulations. It is found that for an…

Charge-domain compute-in-memory (CIM) SRAMs have recently become an enticing compromise between computing efficiency and accuracy to process sub-8b convolutional neural networks (CNNs) at the edge. Yet, they commonly make use of a fixed…

Emerging nano-scale programmable Resistive-RAM (RRAM) has been identified as a promising technology for implementing brain-inspired computing hardware. Several neural network architectures, that essentially involve computation of scalar…

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…

Experimental results from a 65 nm CMOS commercial technology SRAM test chip reveal a linear correlation between a new electrical parameter -- the word-line voltage margin (VWLVM) -- and the measured circuit alpha-SER. Additional experiments…

We designed a device for Convolution Neural Network applications with non-volatile MRAM memory and computing-in-memory co-designed architecture. It has been successfully fabricated using 22nm technology node CMOS Si process. More than 40MB…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…

The successful detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a traditional BioFET is fundamentally limited by…