Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device's resistance range to be between 1kΩ and 10MΩ with a minimum voltage range of ±1.5V on the device.
@article{arxiv.2205.08379,
title = {A CMOS-based Characterisation Platform for Emerging RRAM Technologies},
author = {Andrea Mifsud and Jiawei Shen and Peilong Feng and Lijie Xie and Chaohan Wang and Yihan Pan and Sachin Maheshwari and Shady Agwa and Spyros Stathopoulos and Shiwei Wang and Alexander Serb and Christos Papavassiliou and Themis Prodromakis and Timothy G. Constandinou},
journal= {arXiv preprint arXiv:2205.08379},
year = {2022}
}
Comments
5 pages. To be published in ISCAS 2022 and made available on IEEE Xplore