Related papers: Infinite magneto-resistance and bipolar effect in …
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather…
The recently discovered spin Hall magnetoresistance effect electrically probes pure spin current flow across a ferrimagnetic insulator/normal metal bilayer interface. While usually the DC electrical resistance of the bilayer is measured as…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
We show that engineering of tunnel barriers forming at the interfaces of a one-dimensional spin valve provides a viable path to a strong gate-voltage tunability of the magnetoresistance effect. In particular, we investigate theoretically a…
Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a…
We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, $\gamma$-MoTe$_2$, protected from…
The interplay between spin and charge in solids is currently among the most discussed topics in condensed matter physics. Such interplay gives rise to magneto-electric coupling, which in the case of solids was named magneto-electric effect,…
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…
A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Analytic results are discovered when the hyperfine, exchange, and dipolar…
Conjugated polymers exhibit unique spin-dependent phenomena arising from weak yet critical hyperfine interactions. Understanding these spin effects, particularly the spin-dependent formation and decay of correlated spin pairs, is important…
The classical laws of physics are usually invariant under time reversal. Here, we reveal a novel class of magnetomechanical effects rigorously breaking time-reversal symmetry. The effect is based on the mechanical rotation of a hard magnet…
Spin valve systems based on the giant magnetoresistive (GMR) effect as used for example in hard disks and automotive applications consist of several functional metallic thin film layers. We have identified by secondary ion mass spectrometry…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…
The field of spin electronics (spintronics) was initiated by the discovery of giant magnetoresistance (GMR) for which Fert[1] and Grunberg[2] were awarded the 2007 Nobel Prize for Physics. GMR arises from differential scattering of the…
Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that…
Spin Hall magnetoresistance (SMR) and magnon excitation magnetoresistance (MMR) that all generate via the spin Hall effect and inverse spin Hall effect in a nonmagnetic material are always related to each other. However, the influence of…
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of…
The understanding of magnetoresistance (MR) in organic spin valves (OSVs) based on molecular semiconductors is still incomplete after its demonstration more than a decade ago. While carrier concentration may play an essential role in spin…
We theoretically investigate magnetoresistance (MR) effects in connection with spin filtering in quantum-coherent transport through tunnel junctions based on non-magnetic/semimagnetic heterostructures. We find that spin filtering in…
We study the dynamics of spin valves consisting of two layers of magnetic insulators separated by a normal metal in the macrospin model. A current through the spacer generates a spin Hall current that can actuate the magnetization via the…