Related papers: Infinite magneto-resistance and bipolar effect in …
We formulate a theory of the AC spin Hall magnetoresistance (SMR) in a bilayer system consisting of a magnetic insulator such as yttrium iron garnet (YIG) and a heavy metal such as platinum (Pt). We derive expressions for the DC voltage…
Fluctuations of the magnetization in spin valves are shown to cause resistance noise that strongly depends on the magnetic configuration. Due to the applied external field and the dynamic exchange interaction through the normal metal…
The effects of the spin-orbit interaction on the tunneling magnetoresistance of magnetic tunnel junctions are investigated. A model in which the experimentally observed two-fold symmetry of the anisotropic tunneling magnetoresistance (TAMR)…
The relevance of pair-breaking by exchange and dipolar fields, and by injected spins in a low carrier density cuprate Y$_{1-x}$Pr$_x$Ba$_2$Cu$_3$O$_7$ sandwiched between two ferromagnetic La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ layers is…
The theory of magnetoresistance of the edge state of a two-dimensional topological insulator is developed. The magnetic field violates the time-reversal invariance. Magnetoresistance arises due to the energy gap opened by a magnetic field…
The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the magnetization directions of two ferromagnetic layers determine the giant magnetoresistance magnitude. However, achieving…
The unusual magnetoresistance (MR) behavior in Sr2FeMoO6, recently termed as spin-valve type MR (SVMR), presents several anomalies that are little understood so far. The difficulty in probing the origin of this phenomenon, arising from the…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…
The magnetization reversal in a single molecular magnet (SMM) weakly coupled to an electrode with spin-dependent splitting of chemical potentials (spin bias) is theoretically investigated by means of the rate equation. A microscopic…
We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…
A version of the magnetoimpurity theory of the colossal magnetoresistance materials suitable for the double exchange ferromagnetic nondegenerate semiconductors is presented. It provides an explanation of the nonmonotonic temperature…
The longitudinal magnetoresistance (MR) is assumed to be hardly realized as the Lorentz force does not work on electrons when the magnetic field is parallel to the current. However, in some cases, longitudinal MR becomes large, which…
A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the…
Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor…
The spin-orbit interaction enables interconversion between a charge current and a spin current. It is usually believed that in a nonmagnetic metal (NM) or at a NM/ferromagnetic metal (FM) bilayer interface, the symmetry of spin-orbit…
We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the…
The magnetic, magneto-transport and ARPES studies of Fe and S co-doped Bi2Se3 were investigated. With doping concentration magneto-resistance (MR) gradually decreases and for a certain doping concentration giant negative MR is observed…
Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…