Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor measurements, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory (MRAM). Today, the new GMR materials based on organic material obtained after allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organic light-emitting diodes). This organic material is used as a spacer layer in GMR devices with spin-valve structures. Traditionally, metals and semiconductors are used as a spacer layer in spin-valve. However, several factors such as spin scattering caused by large atoms of the spacer material and the interface scattering of ferromagnetic with a spacer, will limit the efficiency of spin-valve. In this paper, we describe a new GMR materials based on organic material that we have developed.
@article{arxiv.1110.1123,
title = {Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor},
author = {Mitra Djamal and Ramli and Sparisoma Viridi and Khairurrijal},
journal= {arXiv preprint arXiv:1110.1123},
year = {2012}
}
Comments
3 pages, 6 figures, sumbitted to ICICI-BME 2011 "Science and Technology for Health"