Related papers: Infinite magneto-resistance and bipolar effect in …
The recently reported Bilinear Magnetoeletric Resistance (BMR) in novel materials with rich spin textures, such as bismuth selenide (Bi$_2$Se$_3$) and tungsten ditelluride (WTe$_2$), opens new possibilities for probing the spin textures via…
We present calculations of spin-dependent electron transport through single organic molecules bridging pairs of iron nanocontacts. We predict the magnetoresistance of these systems to switch from positive to negative with increasing applied…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…
Direct tunneling in ferromagnetic junctions is compared with impurity-assisted, surface state assisted, and inelastic contributions to a tunneling magnetoresistance (TMR). Theoretically calculated direct tunneling in iron group systems…
In magnetic systems, angular momentum is carried by spin and orbital degrees of freedom. Nonlocal devices, comprising heavy-metal nanowires on magnetic insulators like yttrium iron garnet (YIG), enable angular momentum transport via…
Measuring the magnetoresistance (MR) of ultraclean {\it GaAs} two-dimensional holes in a large $r_s$ range of 20-50, two striking behaviors in relation to the spin-orbit coupling (SOC) emerge in response to strong electron-electron…
Starting from the irreducible representations of the group of the wave vector we construct the spin wave functions consistent with inversion symmetry, neglected in the usual representation analysis. We obtain the relation between the basis…
Using micromagnetics we demonstrate that the r.f. field produced by a spin valve can be used to reverse the magnetization in a magnetic nanoparticle. The r.f. field is generated using a current that specifically excites a uniform spin wave…
The existence of conserved spin Hall currents is shown in a strongly correlated system without involving spin-orbit coupling. The spin Hall conductivity is determined by intrinsic bulk properties, which remains finite even when the charge…
We propose a spin valve device based on the interplay of a modulated spin-orbit interaction and a uniform external magnetic field acting on a quantum wire. Half-metal phases, where electrons with only a selected spin polarization exhibit…
Strength of the the symmetry spin filtering effect (as defined by the asymptotic behavior of the tunneling magnetoresistance (TMR) at large barrier thicknesses induced by this effect) is studied for the Fe/MgO/Fe magnetic tunnel junctions…
We report on our theoretical study of the inverse TMR effect in the spin polarized transport through a narrow channel. In the weak tunneling limit, we find the ordinary positive TMR. The TMR changes its sign as the transmission probability…
We study charge transport in a two dimensional hybrid systems consisting of nonmagnetic two dimensional electron gas with spin-orbit interaction sandwiched between a Ferromagnetic lead and a normal metallic lead (FM/2DEG/NM). An {\it…
All-solid-state nanoscale devices capable of efficiently controlling a heat flow are crucial for advanced thermal management technologies. Here we predict a magnon-driven magnetothermal resistance (mMTR) effect in multilayers of…
Charge-spin conversion phenomena such as the spin Hall effect allow for the excitation of magnons in a magnetic layer by passing an electric current in an adjacent nonmagnetic conductor. We demonstrate that this current-induced modification…
A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular…
The resistance of a ferromagnet/superconductor/ferromagnet (F/S/F) spin valve near its superconducting transition temperature, $T_c$, depends on the state of magnetization of the F layers. This phenomenon, known as spin switch effect (SSE),…
Ballistic spin polarized transport through diluted magnetic semiconductor (DMS) single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits…
We present a model for the positive extreme magnetoresistance (XMR), recently observed in a plethora of metallic systems, such as PtSn$_4$, PtBi$_2$, PdCoO$_2$, WTe$_2$, NbSb$_2$, NbP, TaSb$_2$, LaSb, LaBi, ZrSiS and MoTe$_2$. The model is…
To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance…