Inverse Tunneling Magnetoresistance in nanoscale Magnetic Tunnel Junctions
Mesoscale and Nanoscale Physics
2009-11-11 v1 Strongly Correlated Electrons
Abstract
We report on our theoretical study of the inverse TMR effect in the spin polarized transport through a narrow channel. In the weak tunneling limit, we find the ordinary positive TMR. The TMR changes its sign as the transmission probability becomes large close to a unity. Our results might be relevant to the magnetic tunnel junction with a pinhole or a quantum point contact.
Keywords
Cite
@article{arxiv.cond-mat/0505376,
title = {Inverse Tunneling Magnetoresistance in nanoscale Magnetic Tunnel Junctions},
author = {Tae-Suk Kim},
journal= {arXiv preprint arXiv:cond-mat/0505376},
year = {2009}
}
Comments
11 pages, 4 figures, To be published in Phys. Rev. B (in press)