Tunnel Magneto-resistance in GaMnAs: going beyond Julli\`{e}re formula
Materials Science
2009-11-10 v2 Mesoscale and Nanoscale Physics
Abstract
The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The materials are described in the 6 band model which includes spin orbit interaction. Ferromagnetism is described in the virtual crystal mean field approximations. Our results indicate that TMR is a function of of spin polarization and barrier thickness. As a result of the stong spin orbit interactions, TMR also depends on the the angle between current flow direction and the electrode magnetization. These results compromise the validity of Julliere formula.
Keywords
Cite
@article{arxiv.cond-mat/0405473,
title = {Tunnel Magneto-resistance in GaMnAs: going beyond Julli\`{e}re formula},
author = {L. Brey and C. Tejedor and J. Fernández-Rossier},
journal= {arXiv preprint arXiv:cond-mat/0405473},
year = {2009}
}
Comments
3 pages, 3 figures included