The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the magnetization directions of two ferromagnetic layers determine the giant magnetoresistance magnitude. However, achieving all-voltage manipulation of the magnetization directions between parallel and antiparallel states is a significant challenge. Here, we demonstrate that by utilizing two exchange-biased Co/IrMn bilayers with opposite pinning directions and with ferromagnetic coupling through the Ruderman-Kittel-Kasuya-Yosida interaction between two Co layers, the magnetization directions of the two ferromagnetic layers of a spin valve can be switched between parallel and antiparallel states through allvoltage-induced strain control. The all-voltage controlled giant magnetoresistance is repeatable and nonvolatile. The rotation of magnetizations in the two Co layers under voltages, from antiparallel to parallel states, occurs in opposite directions as revealed through simulations utilizing the Landau-Lifshitz-Gilbert equation. This work can provide valuable reference for the development of low-power all-voltage-controlled spintronic devices.
@article{arxiv.2405.16863,
title = {All-voltage control of Giant Magnetoresistance},
author = {Lujun Wei and Yiyang Zhang and Fei Huang and Jiajv Yang and Jincheng Peng and Yanghui Li and Yu Lu and Jiarui Chen and Tianyu Liu and Yong Pu and Jun Du},
journal= {arXiv preprint arXiv:2405.16863},
year = {2024}
}