The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors
Disordered Systems and Neural Networks
2012-06-25 v1 Mesoscale and Nanoscale Physics
Abstract
A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Analytic results are discovered when the hyperfine, exchange, and dipolar interactions have little time to operate between hopping events. We find an angle-of-field dependence of the magnetoresistance that agrees with previous experiments and numerical simulations. In addition we report new magnetoresistive behavior that critically depends upon the amount of anisotropy in the dipolar interaction.
Keywords
Cite
@article{arxiv.1203.4264,
title = {The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors},
author = {N. J. Harmon and M. E. Flatté},
journal= {arXiv preprint arXiv:1203.4264},
year = {2012}
}
Comments
10 pages, 8 figures. Submitted to Phys. Rev. B