Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures
Abstract
The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor structures which are not symmetric with respect to spatial inversion, for instance in bulk zinc-blend semiconductors. The interaction has both symmetric and antisymmetric parts with respect to permutation of spin components. The antisymmetric (Dzyaloshinskii-Moriya) interaction is the strongest one. It contributes significantly into spin relaxation of localized electrons; in particular, it governs low-temperature spin relaxation in n-GaAs with the donor concentration near 10^16cm-3. The interaction must be allowed for in designing spintronic devices, especially spin-based quantum computers, where it may be a major source of decoherence and errors.
Keywords
Cite
@article{arxiv.cond-mat/0011340,
title = {Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures},
author = {K. V. Kavokin},
journal= {arXiv preprint arXiv:cond-mat/0011340},
year = {2009}
}