Anomalous organic magnetoresistance from competing carrier-spin-dependent interactions with localized electronic and nuclear spins
Materials Science
2016-03-14 v1 Disordered Systems and Neural Networks
Abstract
We describe a new regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized electronic spins to a material that exhibits substantial room-temperature magnetoresistance (\%). Although initially the magnetoresistance is suppressed by the doping, at intermediate doping there is a regime where the magnetoresistance is insensitive to the doping level. For much greater doping concentrations the magnetoresistance is fully suppressed. The behavior is described within a theoretical model describing the effect of carrier spin dynamics on the current.
Keywords
Cite
@article{arxiv.1407.6313,
title = {Anomalous organic magnetoresistance from competing carrier-spin-dependent interactions with localized electronic and nuclear spins},
author = {Y. Wang and N. J. Harmon and K. Sahin-Tiras and M. Wohlgenannt and M. E. Flatté},
journal= {arXiv preprint arXiv:1407.6313},
year = {2016}
}