Origin of magnetoresistance suppression in thin $\gamma$-MoTe$_2$

Shazhou Zhong; Archana Tiwari; George Nichols; Fangchu Chen; Xuan Luo; Yuping Sun; Adam W. Tsen

doi:10.1103/PhysRevB.97.241409

Origin of magnetoresistance suppression in thin $\gamma$-MoTe$_2$

Materials Science 2018-07-04 v1

Authors: Shazhou Zhong , Archana Tiwari , George Nichols , Fangchu Chen , Xuan Luo , Yuping Sun , Adam W. Tsen

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Abstract

We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, $\gamma$ -MoTe $_2$ , protected from oxidation. We find that the magnetoresistance is systematically suppressed with reduced thickness. This occurs concomitantly with both a decrease in carrier mobility and increase in electron-hole imbalance. We model the two effects separately and conclude that the XMR effect is more sensitive to the former.

Keywords

magnetoresistance gamma-mote2 weyl semimetal thickness dependence carrier mobility quantum oscillation

Cite

@article{arxiv.1805.07332,
  title  = {Origin of magnetoresistance suppression in thin $\gamma$-MoTe$_2$},
  author = {Shazhou Zhong and Archana Tiwari and George Nichols and Fangchu Chen and Xuan Luo and Yuping Sun and Adam W. Tsen},
  journal= {arXiv preprint arXiv:1805.07332},
  year   = {2018}
}

Origin of magnetoresistance suppression in thin $\gamma$-MoTe$_2$

Abstract

Keywords

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