Related papers: Achieving Single-Electron Sensitivity at Enhanced …

Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…

Superconducting nanowire single-photon detectors (SNSPDs) show near unity efficiency, low dark count rate, and short recovery time. Combining these characteristics with temporal control of SNSPDs broadens their applications as in active…

A new approach was developed for the design of front-end circuits for semiconductor radiation detectors. The readout scheme consists of a first stage made of only a few components located close to the detector, and of a remote second stage…

Cryogenic opto-electronic interconnects are gaining increasing interest as a means to control and read out cryogenic electronic components. The challenge is to achieve sufficient signal integrity with low heat load processing. In this…

CCCP, a CCD Controller for Counting Photons, is presented. This new controller uses a totally new clocking architecture and allows to drive the CCD in a novel way. Its design is optimized for the driving of EMCCDs at up to 20MHz of pixel…

Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems…

The self-noise of capacitive sensors, primarily caused by thermal noise from the gate-bias resistor in the preamplifier, imposes a fundamental limit on measurement sensitivity. In electret condenser microphones (ECMs), this resistor…

We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the…

Current, state-of-the-art CCDs are close to being able to deliver all key performance figures for future strategic X-ray missions except for the required frame rates. Our Stanford group is seeking to close this technology gap through a…

To search for dark matter candidates with masses below $\mathcal{O}$(MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic…

Thick, Charge Coupled Devices (CCDs) have recently been explored for applied physics, such as nuclear explosion monitoring, and dark matter detection purposes. When run in fully-depleted mode, these devices are sensitive detectors for…

We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…

Upon photo- or electrical-excitation, colloidal quantum dots (QDs) are often found in multi-carrier states due to multi-photon absorption and photo-charging of the QDs. While many of these multi-carrier states are observed in single-dot…

The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absortion Transient Current Technique (TPA-TCT). This technique provides sensitivity maps with micrometer-scale spatial resolution, enabling…

High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from…

We study the potential of the MCP-PMT read-out to detect single photo-electron using transmission lines. Such a solution limits the number of read-out channels, has a uniform time resolution across the PMT surface and provides…

We use a science-grade Skipper Charge Coupled Device (Skipper-CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate,…

For the first time, a small dual-phase (liquid/gas) xenon time projection chamber was equipped with a top array of silicon photomultipliers for light and charge readout. Here we describe the instrument in detail, as well as the data…

The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of…

High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the…