Related papers: Achieving Single-Electron Sensitivity at Enhanced …
We demonstrate a single-stage multipass cell (MPC) compressor driven directly by a 500 nJ, 5 W, 120 fs, 10 MHz oscillator that delivers efficient spectral broadening from 800 to 1200 nm with >75% transmission. The compressed pulses approach…
Efficiently distinguishing photon numbers is a crucial yet challenging technology for various quantum information and quantum metrology applications. While superconducting transition edge sensors offer good photon-number-resolving (PNR)…
Photonic integrated circuits (PICs) have emerged as a scalable platform for complex quantum technologies using photonic and atomic systems. A central goal has been to integrate photon-resolving detectors to reduce optical losses, latency,…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…
Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge…
Conventional readout of a superconducting nanowire single-photon detector (SNSPD) sets an upper bound on the output voltage to be the product of the bias current and the load impedance, $I_\mathrm{B}\times Z_\mathrm{load}$, where…
We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing…
We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmented…
The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 \mu s read-out time. Its performances are quite close to the ILD vertex…
Silicon photomultipliers are increasingly replacing photomultiplier tubes in Cherenkov telescope cameras, but achieving single-photoelectron resolution with nanosecond timing in a low-noise, scalable detector system remains challenging. We…
Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on…
Thorough numerical simulations were run to test the performance of three processing methods of the data coming out from an electron multiplying charge coupled device (EMCCD), or low light level charge coupled device (L3CCD), operated at…
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the…
The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…
We propose the realization of capacitive temperature sensors based on the concept of displacement amplification. Our design features two high coefficient of thermal expansion (CTE) metallic layers separated by a low-CTE dielectric layer;…
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…
A crucial limit to measurement efficiencies of superconducting circuits comes from losses involved when coupling to an external quantum amplifier. Here, we realize a device circumventing this problem by directly embedding a two-level…