Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing quantum dots (QDs) in a high-κ nanowire transistor. The superconducting chiplet contains resonant and coupling elements as well as LC filters that, when interfaced with the silicon chip, result in a resonant frequency f=2.12 GHz, a loaded quality factor Q=850, and a resonator impedance Z=470Ω. Combined with the large gate lever arms of SOI technology, we achieve a minimum integration time for single and double QD transitions of 2.77 ns and 13.5 ns, respectively. We utilize the assembly to measure charge noise over 9 decades of frequency up to 500 kHz and find a 1/f dependence across the whole frequency spectrum as well as a charge noise level of 4 μeV/Hz at 1 Hz. The modular microwave circuitry presented here can be directly utilized in conjunction with other quantum device to improve the readout performance as well as enable large bandwidth noise spectroscopy, all without the complexity of superconductor-semiconductor monolithic fabrication.
@article{arxiv.2304.13442,
title = {Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots},
author = {Felix-Ekkehard von Horstig and David J. Ibberson and Giovanni A. Oakes and Laurence Cochrane and David F. Wise and Nadia Stelmashenko and Sylvain Barraud and Jason A. W. Robinson and Frederico Martins and M. Fernando Gonzalez-Zalba},
journal= {arXiv preprint arXiv:2304.13442},
year = {2024}
}