Related papers: Achieving Single-Electron Sensitivity at Enhanced …
We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices…
This paper presents a compact low-power, low-noise bioamplifier for multi-channel electrode arrays, aimed at recording action potentials. The design we put forth attains a notable decrease in both size and power consumption. This is…
We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of…
We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) pixel technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution…
The requirements and details of designing a measuring cell and low-back-action deeply-cooled amplifier for quantum measurements at 10 mK are discussed. This equipment is a part of a microwave single-photon counter based on a superconducting…
Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…
We have constructed and tested a 2d position sensitive parallel-plate gas ionization chamber with scanned charge transfer readout. The scan readout method described here is based on the development of a new position dependent charge…
Fault-tolerant quantum information processing with flawed qubits and gates requires highly efficient, quantum non-demolition (QND) qubit readout. In superconducting circuits, qubit readout using coherent light with fidelity above 99% has…
The upgrade of the Resistive Plate Chamber (RPC) detector, in order to increase the detector rate capability and to be able to work efficiently in high rate environment, consists in the reduction of the operating voltage along with the…
The atomic layer deposition(ALD) coating lengthens the lifetime of microchannel plates(MCP), which are used as the electron amplifier of the photomultiplier tubes(PMT). In the Jinping Neutrino Experiment, the newly developed 8-inch MCP-PMT…
We demonstrate fast readout of a double quantum dot (DQD) that is coupled to a superconducting resonator. Utilizing parametric amplification in a nonlinear operational mode, we improve the signal-to-noise ratio (SNR) by a factor of 2000…
We consider the free carrier dispersion effect in a semiconductor nanocavity in the limit of discrete photoexcited electron-hole pairs. This analysis reveals the possibility of ultrafast, incoherent transduction and gain from a single…
Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip…
A voltage amplifier, based on the BFU500XRR NPN transistor in a common-emitter configuration, was developed for the readout of the fast output of an ONSEMI MicroFC-10035 Silicon Photomultiplier (SiPM). This amplifier was tested and…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality…
Single photon detectors are key for time-correlated photon counting applications [1] and enable a host of emerging optical quantum information technologies [2]. So far, the leading approach for continuous and efficient single-photon…
Single electron transistors (SETs) fabricated from single-walled carbon nanotubes (SWNTs) can be operated as highly sensitive charge detectors reaching sensitivity levels comparable to metallic radio frequency SETs (rf-SETs). Here we…
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the…
Physical principles of performance and main characteristics of a novel avalanche photodetector developed on the basis of MOS(metal-oxide-silicon) technology is presented. The photodetector contains a semitransparent gate electrode and a…