Physical principles of performance and main characteristics of a novel avalanche photodetector developed on the basis of MOS(metal-oxide-silicon) technology is presented. The photodetector contains a semitransparent gate electrode and a drain contact to provide a drift of multiplicated charge carriers along the semiconductor surface. A high gain(more than 10^4) of photocurrent was achived due to the local negative feedback effect realizied on the Si-SiO_2 boundary. Special attention is paid to the possibilities of development of a supersensitive avalanche CCD (charge coupled device) for detection of individual photons in visible and ultraviolet spectral regions. Experimental results obtained with a two-element CCD prototype are discussed.
@article{arxiv.hep-ex/9909017,
title = {Supersensitive avalanche silicon drift photodetector},
author = {Z. Ya. Sadygov and M. K. Suleimanov and T. Yu. Bokova},
journal= {arXiv preprint arXiv:hep-ex/9909017},
year = {2007}
}