Related papers: Achieving Single-Electron Sensitivity at Enhanced …
Low noise CCDs fully-depleted up to 675 micrometers have been identified as a unique tool for Dark Matter searches and low energy neutrino physics. The charge collection efficiency (CCE) for these detectors is a critical parameter for the…
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…
We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly…
Readout noise is a critical parameter for characterizing the performance of charge-coupled devices (CCDs), which can be greatly reduced by the correlated double sampling (CDS) circuit. However, conventional CDS circuit inevitably introduces…
Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency…
We demonstrate fast and ultrasensitive charge detection with a cavity-embedded Cooper pair transistor (cCPT) via dispersive readout of its Josephson inductance. We report a minimum charge sensitivity of $14$ $\mu e/\sqrt{\mathrm{Hz}}$ with…
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…
Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum…
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…
Field effect transistors embedded into a depleted silicon bulk (DEPFETs) can be used as the first amplifying element for the detection of small signal charges deposited in the bulk by ionizing particles, X-ray photons or visible light. Very…
We present the development of a single-photon detector and the connected read-out electronics. This `hybrid' detector is based on a vacuum tube, transmission photocathode, microchannel plate and a pixelated CMOS read-out anode encapsulating…
We introduce the fully-depleted charge-coupled device (CCD) as a particle detector. We demonstrate its low energy threshold operation, capable of detecting ionizing energy depositions in a single pixel down to 50 eVee. We present results of…
We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point…
Accurate detection of quantum states is a vital step in the development of quantum computing. Image-charge detection of quantum states of electrons on liquid helium can potentially be used for the readout of a single-electron qubit;…
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…
DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…
We present a time-over-threshold readout technique to count the number of activated pixels from an array of superconducting nanowire single photon detectors (SNSPDs). This technique maintains the intrinsic timing jitter of the individual…
Cluster counting dN/dx is a promising method to enhance particle identification for gaseous detectors, especially in next-generation collider experiments like the FCC-ee, where good pion-kaon separation over a broad momentum range is…
We present results from the characterization and optimization of six Skipper CCDs for use in a prototype focal plane for the SOAR Integral Field Spectrograph (SIFS). We tested eight Skipper CCDs and selected six for SIFS based on…
We present a comprehensive characterization of the LAPPD Gen-II, a large-area microchannel-plate photomultiplier tube (MCP-PMT) equipped with a capacitively coupled sensing (readout) electrode. Two detector variants with different…