Related papers: Single electron Sensitive Readout (SiSeRO) X-ray d…

This paper presents the development of a new technology of registration of ionizing radiation and a new type of detectors - single-cathode multiwire porous detector with neither a gaseous nor semiconductor, but a porous dielectric…

The readout of the quantum spin state is a challenge for any spin-based quantum computing implementation. We propose a scheme, based on the achieved technique of single electron transistor (SET), to implement the readout of electronic spin…

We propose a new concept for a very low background multi-ton liquid xenon Dark Matter experiment. The detector consists of two concentric spheres and a charge readout device in the centre. Xenon between the two spheres forms a self-shield…

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which…

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…

We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate…

In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average…

Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such…

Various chips for the silicon sensors measurements are described. These chips are based on 0.35 um and 0.18um CMOS technology. Several analog chips together with self-trigger /derandomizer one allow to measure silicon sensors designed for…

This letter proposes a lightweight, model-free online diagnostic framework for detecting internal short circuits (ISC) in single lithium-ion cells under dynamic operating conditions. The core of the method lies in computing the first-order…

When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…

A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,…

We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and characterized in the context of single-electron…

We demonstrate first experimental investigation on the performance of a single-node reservoir computer based on a silicon microring resonator (MRR) operating on the digit recognition task. The input layer of the reservoir is composed of a…

We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less…

Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…

We use a science-grade Skipper Charge Coupled Device (Skipper-CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate,…

A wide swing charge sensitive amplifier (CSA) has been developed, as a part of a front-end electronics (FEE) readout ASIC, for a prototype silicon tungsten (Si-W) based electromagnetic (EM) calorimeter. The CSA, designed in 0.35 $\mu$m…

Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, spin readout typically relies on proximal charge sensors,…

The PICOSEC detection concept consists in a "two-stage" Micromegas detector coupled to a Cherenkov radiator and equipped with a photocathode. A proof of concept has already been tested: a single-photoelectron response of 76 ps has been…