We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits.
@article{arxiv.1912.10884,
title = {Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays},
author = {L. Hutin and B. Bertrand and E. Chanrion and H. Bohuslavskyi and F. Ansaloni and T. -Y. Yang and J. Michniewicz and D. J. Niegemann and C. Spence and T. Lundberg and A. Chatterjee and A. Crippa and J. Li and R. Maurand and X. Jehl and M. Sanquer and M. F. Gonzalez-Zalba and F. Kuemmeth and Y. -M. Niquet and S. De Franceschi and M. Urdampilleta and T. Meunier and M. Vinet},
journal= {arXiv preprint arXiv:1912.10884},
year = {2019}
}