Related papers: Single electron Sensitive Readout (SiSeRO) X-ray d…

We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology,…

We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable…

A theoretical analysis of the charge sensitivity of the RF-SET is presented. We use the ``orthodox'' approach and consider the case when the carrier frequency is much less than $I/e$ where $I$ is the typical current through RF-SET. The…

Future strategic X-ray missions, such as the Advanced X-ray Imaging Satellite (AXIS) and those targeted by the Great Observatories Maturation Program (GOMaP), require fast, low-noise X-ray imaging spectrometers. To achieve the speed and…

We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…

The single electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random…

The readout noise for Charge-Coupled Devices (CCDs) has been the main limitation when using these detectors for measuring small amplitude signals. A readout system for a new scientific, low noise CCD is presented in this paper. The Skipper…

This paper presents the design and post-layout characteristics of a differential capacitance based inertial accelerometer This includes a MEMS based mechanical sensing element and a CMOS charge amplifier, which is the first stage of a…

Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…

PARISROC is a complete read out chip, in AMS SiGe 0.35 micron technology [1], for photomultipliers array. It allows triggerless acquisition for next generation neutrino experiments and it belongs to an R&D program funded by the French…

We present the fabrication and measurement of a radio frequency single electron transistor (rf-SET), that displays a very high charge sensitivity of 1.9 microlectrons/sqrt(Hz) at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0…

The SemiConductor Tracker (SCT) together with the Pixel detector and the Transition Radiation Tracker (TRT) form the central tracking system of the ATLAS experiment at the LHC. It consists of single-sided microstrip silicon sensors, which…

The CLEO III detector has recently commenced data taking at the Cornell electron Storage Ring (CESR). One important component of this detector is a 4 layer double-sided silicon tracker with 93% solid angle coverage. This detector ranges in…

We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown.…

We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with…

In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS…

Several types of detectors are used to detect charged particles in particle and nuclear physics experiments. Since the semiconductor detector has superior spatial and kinematic resolutions as well as good response time than other types of…

We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby…

We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~\mu$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence…

We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) pixel technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution…