Related papers: Single electron Sensitive Readout (SiSeRO) X-ray d…
Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for…
This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at…
A prototype detector for Compton camera imaging is under development. A monolithic array of 19 channel Silicon drift detector with on-chip electronics is going to be used as a scatter detector for the prototype system. Custom designed…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point…
Transition-edge sensor (TES) is a highly sensitive device that is capable of detecting extremely low levels of energy. It is characterised by low noise performance and high energy resolution. A mature method for reading out TES signal is…
As the Chinese Spallation Neutron Source enters Phase II, the increase in proton beam power will lead to a further boost in the intensity of pulsed neutron beams. To address the demand for higher event-rate readout electronics for…
Single electron transistors (SETs) fabricated from single-walled carbon nanotubes (SWNTs) can be operated as highly sensitive charge detectors reaching sensitivity levels comparable to metallic radio frequency SETs (rf-SETs). Here we…
Hybrid pixel single-photon-counting detectors have been successfully employed and widely used in Synchrotron radiation X-ray detection. In this paper, the silicon pixel sensors for single X-ray photon detection, which operate in…
Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to…
Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge…
The SoLid collaboration have developed an intelligent readout system to reduce their 3200 silicon photomultiplier detector's data rate by a factor of 10000 whilst maintaining high efficiency for storing data from anti-neutrino interactions.…
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m…
Muon tomography is a non-destructive imaging technique that uses cosmic-ray muons to probe dense materials. Bar scintillator and scintillating fiber detectors equipped with one-dimensional SiPM arrays offer compact, high-resolution…
CEPC (Circular Electron and Positron Collider) is a large experiment facility proposed by Chinese particle physics community. One of its running option is being the Higgs factory. Calorimeter is the main part of this experiment to measure…
Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
The future development of quantum information using superconducting circuits requires Josephson qubits [1] with long coherence times combined to a high-fidelity readout. Major progress in the control of coherence has recently been achieved…