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Nowadays the development of high-field magnets strongly relies on the performance of superconducting materials. Iron-based superconductors exhibit high upper critical fields and low electromagnetic anisotropy, making them particularly…
We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by x-ray diffraction (XRD) while…
Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate.…
Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial…
For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e.…
We have investigated the Co-doping dependence of the structural, transport, and magnetic properties of \epsilon-FeCoSi epilayers grown by molecular beam epitaxy on silicon (111) substrates. Low energy electron diffraction, atomic force…
Electron-doped infinite-layer Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ films over a wide doping range have been prepared epitaxially on SrTiO$_3$(001) using reactive molecular beam epitaxy. In-plane transport measurements of the single crystalline…
Most commercial high-temperature superconducting coated conductors based on ion beam assisted MgO deposited templates use $\mathrm{LaMnO_3}$ (LMO) films as the terminating buffer layer. In contrast, coated conductors based on inclined…
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium…
BaZn2As2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic alpha phase and a higher-symmetry tetragonal beta phase. Here, we report high-quality epitaxial films of the tetragonal beta-BaZn2As2…
The growth mechanisms of MgB2 films obtained by different methods on various substrates are compared via a detailed cross-sectional scanning electron microscopy (SEM) study. The analyzed films include (a) samples obtained by an ex-situ…
Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality…
We have fabricated Na_xCoO_2 thin films via lateral diffusion of sodium into Co_3O_4 (111) epitaxial films (reactive solid-phase epitaxy: Ref. 4). The environment of thermal diffusion is key to the control of the sodium content in thin…
Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin…
Very thick, ~ 40 $\mu$m, clean, and highly textured MgB2 film was effectively grown on an Al2O3 substrate. The fabrication technique is by the hybrid physical-chemical vapor deposition (HPCVD) using B2H6 gas and Mg ingot as the sources. The…
A phenomenological thermodynamic theory of BaxSr(1-x)TiO3 (BST-x) thin films epitaxially grown on cubic substrates is developed using the Landau-Devonshire approach. The eighth-order thermodynamic potential for BT single crystal and…
We have studied the magneto-optical and magnetotrasnport properties of GaMnAs thin films with high Mn concentrations (x= 12.2 - 21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth…
Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical…
Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 {\deg}C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron…
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature…