For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e. superconducting tapes). A strain-induced shift of the superconducting transition temperature of 0.1 K for Co-doped BaFe2As2 was observed along [100] direction, corresponding to a uniaxial pressure derivative dTc/dp100=-4 K/GPa. For Mn3CuN, a uniaxial strain derivative along [100] direction of the Curie temperature dTC/de100=13 K/% was observed. The current approach is applicable to various functional thin films in a wide range of temperatures.
@article{arxiv.1901.01478,
title = {Novel method to study strain effect of thin films using a piezoelectric-based device and a flexible metallic substrate},
author = {Kazumasa Iida and Yuwa Sugimoto and Takafumi Hatano and Takahiro Urata and Marco Langer and Bernhard Holzapfel and Jens Hänisch and Hiroshi Ikuta},
journal= {arXiv preprint arXiv:1901.01478},
year = {2019}
}