Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

Xiang Gao; Shinbuhm Lee; John Nichols; Tricia L. Meyer; Thomas Z. Ward; Matthew F. Chisholm; Ho Nyung Lee

Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

Materials Science 2016-09-27 v1

Authors: Xiang Gao , Shinbuhm Lee , John Nichols , Tricia L. Meyer , Thomas Z. Ward , Matthew F. Chisholm , Ho Nyung Lee

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Abstract

Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO2(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch.

Keywords

nanoscale self-templating oxide epitaxy symmetry mismatch VO2(B) thin film scanning transmission electron microscopy interfacial bi-layer

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@article{arxiv.1609.07966,
  title  = {Nanoscale self-templating for oxide epitaxy with large symmetry mismatch},
  author = {Xiang Gao and Shinbuhm Lee and John Nichols and Tricia L. Meyer and Thomas Z. Ward and Matthew F. Chisholm and Ho Nyung Lee},
  journal= {arXiv preprint arXiv:1609.07966},
  year   = {2016}
}

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16 pages, 4 figures

Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

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