Related papers: Si Nanowire - Array Source Gated Transistors
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However,…
We report an experimental noise study of intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube (IS-MWCNT) devices. The noise is two orders of magnitude lower than in singlewalled nanotubes (SWCNTs) and has no length…
Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection…
We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by…
A good understanding of the electronic conduction processes through nanocontacts is a crucial step for the implementation of functional nanoelectronic devices. We have studied the current-voltage ($I$-$V$) characteristics of nanocontacts…
The use of metal van der Waals contacts and the implicit reduction in Fermi-level pinning in contacted semiconductors has led to remarkable device optimizations. For example, using graphene as an electrical contact allows for tunable…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional…
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…
We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is…
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is…
Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively…
We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics…
Photoconductivity of single-crystalline selenium nanotubes (SCSNT) under a range of illumination intensities of a 633nm laser is carried out with a novel two terminal device arrangement at room temperature. It's found that SCSNT forms…
Non-reciprocal charge transport in supercurrent diodes (SDs) polarized growing interest in the last few years for its potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid…
Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier…