Related papers: Avalanche effects in solid-phase epitaxial crystal…
The ultrafast structural response of a thin iron film to sub-ps pulsed laser-induced heating has been investigated using time-resolved X-ray diffraction in the partial melting regime. A tetragonal distortion of the bcc-phase emerges at ~6…
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and…
The two-step dehydroxylation of illite is studied using the differential scanning calorimetry on powder samples with heating rates from 1 to 10 ${\deg}$C min$^{-1}$ in a dynamic argon atmosphere. The values of apparent activation energy and…
The interfacial free energy is a central quantity in crystallization from the meta-stable melt. In suspensions of charged colloidal spheres, nucleation and growth kinetics can be accurately measured from optical experiments. In previous…
Recent measurements have found non-classical rotational inertia (NCRI) in solid 4He starting at T ~ 200 mK, leading to speculation that a supersolid state may exist in these materials. Differences in the NCRI fraction due to the growth…
The effect of pressure on structural and thermodynamic properties of ice Ih has been studied by means of path-integral molecular dynamics simulations at temperatures between 50 and 300 K. Interatomic interactions were modeled by using the…
Scintillation characteristics of a thallium doped sodium iodide (NaI(Tl)) crystal with a dimension of 0.6 x 0.6 x 2 cm3 are studied by attaching a silicon photomultiplier (SiPM) direct to the crystal over a temperature range from 93 to 300…
We have studied the scintillation of pure and doped sodium iodide crystals handled in low humidity conditions under external $\alpha$ and $\gamma$ excitation from room temperature down to 4K. The light yield of pure sodium iodide was seen…
Polarization dependent vanadium L edge X-ray absorption spectra of BaVS$_3$ single crystals are measured in the four phases of the compound. The difference between signals with the polarization \textbf{E}$\perp$\textbf{c} and…
Pressure-induced phase transformation occurs during silicon (Si) wafering processes. \b{eta}-tin (Si-II) phase is formed at high pressures, followed by the transformation to Si-XII, Si-III or/and amorphous Si ({\alpha}-Si) phases during the…
A new comprehensive study on the Cs${_2}$ZrCl${_6}$ (CZC) crystal scintillating properties under different types of irradiation was performed over a wide temperature range from 5 to 300 K. The light yield (LY) at room temperature (RT),…
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy…
Ti3SiC2 is a potential structural material for nuclear reactor applications. However, He irradiation effects in this material are not well understood, especially at high temperatures. Here, we compare the effects of He irradiation in…
Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy (STM). The resulting atomic structures change dramatically from a parallel array of…
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to…
Energetic ion irradiation usually decreases superconducting critical temperature(Tc), with the few exceptions involving increases up to a few K only. However, our recent 2.5X10^15 Ar/cm2 irradiations by 1.5 MeV Ar6+ enhanced Tc of the…
We show that the ion beam induced incompressible amorphous solid flow in terms of advection transport mechanism leads to the erosion and deposition of atoms at the amorphous/crystalline (a/c) interface resulting in the formation of pattern…
The process of anomalous transfer of interstitial atoms during impact deformation of the crystal surface is described theoretically. As shown that surface impact leads to the formation of a wave of inhomogeneous atomic displacements in the…
We report on the epitaxial growth of single layer NbS$_2$ on Au(111) and determine both its crystalline and electronic structure by a combination of low-energy electron diffraction, scanning tunnelling microscopy and angle-resolved…
Two 75mm 4H-SiC single crystals are grown by the physical vapor transport (PVT) technique, using different insulation materials. The insulation material of higher thermal conductivity led to an increased radial temperature gradient. The…