Formation of C-centers in Si-based systems by light ion irradiation
Abstract
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and information still remains a challenge. In this work, we utilize light ions, such as H+ and He+, to gently generate quantum emitters in a crystalline Si matrix. Temperature-dependent photoluminescence measurements demonstrate the presence of optically-active defects, whose fluorescence matches the primary telecom window around 1550 nm. In addition, time-resolved investigations unveil long-lived excitonic states in the {\mu}s regime, thus confirming the formation of interstitial oxygen-carbon complexes, termed C-centers. Finally, we explored controlled ion irradiation strategies to seamlessly generate C-centers also in Ge-on-Si heterostructures, which offer an advanced technological platform for the future realization of integrated quantum photonics. This analysis, informed by practical color center synthesis and proof-of-principle experiments in epitaxial architectures, indicates intriguing prospects and profitable strategies to advance the burgeoning field of light-based quantum technologies.
Cite
@article{arxiv.2510.12690,
title = {Formation of C-centers in Si-based systems by light ion irradiation},
author = {Carolina Crosta and Riccardo Nardin and Patrick Daoust and Stefano Achilli and Ian Colombo and Matteo Campostrini and Emiliano Bonera and Jacopo Pedrini and Oussama Moutanabbir and Valentino Rigato and Fabio Pezzoli},
journal= {arXiv preprint arXiv:2510.12690},
year = {2025}
}