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As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches…
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect…
We suggest a phenomenological description of the photo-conversion in Ge-Sb-Te phase-change memory alloys from amorphous to crystalline phase which explains why both photo-excitation and high temperatures T > 160C are required for the…
From the photoluminescence of SiC microcrystals uniformly covering a rectangular mesa of the high transition temperature $T_c$ superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$, the local surface temperature $T({\bm r})$ was directly…
The effect of electron irradiation with the energy of 2.5 MeV on the temperature dependences of the resistivity of an optimally doped $YBa_2Cu_3O_{7-\delta}$ single crystal has been studied. The temperature dependences of both fluctuation…
We investigated the temperature dependence of the superlattice intensity and thermal diffuse scattering intensity of BaAl2O4, which has a network structure with corner-sharing AlO4 tetrahedra, via synchrotron X-ray diffraction experiments.…
The nanoinstability of single crystal Si nanowire under focused electron beam irradiation was in-situ investigated at room temperature by transmission electron microscopy technique. It was observed that the Si nanowire amorphized…
Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular…
Laboratory experiments have confirmed that the radiolytic decay rate of astrochemical ice analogues is dependent upon the solid phase of the target ice, with some crystalline molecular ices being more radio-resistant than their amorphous…
We report the successful growth of high quality single crystals of LiFeAs with lateral sizes up to 5 x 5 mm2 by the Sn-flux method. Electrical resistivity studies reveal that the superconducting onset temperature is 18.2 K with a transition…
The temperature dependence of the first-order phonon mode of single crystal of Silicon (Si) is determined by Raman scattering in a broad temperature range of 4-623 K. Our studies reveal the anomalous red-shift of the Raman active phonon…
It has been shown that many of the phenomena related to the formation of "tails" in the low-concentration region of ion-implanted impurity distribution are due to the anomalous diffusion of nonequilibrium impurity interstitials. These…
We describe a three-dimensional crystalline topological insulator (TI) phase of matter that exhibits spontaneous polarization. This polarization results from the presence of (approximately) flat bands on the surface of such TIs. These flat…
Ab initio molecular dynamics simulation is used to investigate the structure and dynamics of liquid Se at temperatures of 870 and 1370~K. The calculated static structure factor is in excellent agreement with experimental data. The…
The influence of implantation-induced point defects (PDs) on SiC oxidation is investigated via molecular dynamics simulations. PDs generally increase the oxidation rate of crystalline grains. Particularly, accelerations caused by Si…
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC…
The crystal and magnetic structures of the superconducting iron based chalcogenides RbyFe2-xSe2 have been studied by means of single crystal synchrotron x-ray and high resolution neutron powder diffraction in the temperature range 2-570 K.…
Using molecular dynamics simulations we study the thermodynamic behavior of a single-component covalent material described by the recently proposed Environment-Dependent Interatomic Potential (EDIP). The parameterization of EDIP for silicon…
The c-axis tunneling properties of both pristine Bi2212 and its HgBr$_2$ intercalate have been measured in the temperature range 4.2 - 250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single…
The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial silicon is shown to be…