Related papers: Avalanche effects in solid-phase epitaxial crystal…
The simulations of field-evaporation processes for silicon atoms on various Si(001) surfaces are implemented using the first-principles calculations based on the real-space finite-difference method. We find that the atoms which locate on…
Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi…
We construct a theoretical model for low-temperature crystallization of amorphous silicate grains induced by exothermic chemical reactions. As a first step, the model is applied to the annealing experiments, in which the samples are (1)…
An excitonic insulator$^{1,2}$ (EI) is a correlated many-body state of electron-hole pairs, potentially leading to high-temperature condensate and superfluidity$^{3-7}$. Despite ever-growing experiments suggesting possible EI states in…
Monolayer epitaxial graphene is an appropriate candidate for a wide variety of electronic and optical applications. One advantage of growing graphene on the Si face of SiC is that it develops as a single crystal, as does the layer…
We present new computations of the ionizing spectral energy distributions (SEDs) and Lyman continuum (Lyc) and HeI continuum photon emission rates, for hot O-type and early B-type stars. We consider solar metallicity stars, with effective…
In the superionic phase of silver iodide, we observe a distorted tetragonal structure characterized by symmetry breaking in the cation distribution. This phase competes with the well known bcc phase, with a symmetric cation distribution at…
The inclusion of semiconducting material within a composite barrier enables the perfectly uniform propagation of surface ionization waves (SIW) in air at atmospheric pressure regardless of the polarity of the applied electric field, unlike…
Given the importance of incorporating various superconducting materials to device fabrication or substrate development, studying the interface for possible interactions is warranted. In this work, NbN films sputter-deposited on 4H-SiC were…
Lattice constant of Bi$_2$Se$_3$ and Sb$_2$Te$_3$ crystals is determined by X-ray powder diffraction measurement in a wide temperature range. Linear thermal expansion coefficients ($\alpha$) of the crystals are extracted, and considerable…
The radiation chemistry and physics of solid N2O have been increasingly studied due to its potential presence on the surfaces of cold, outer Solar System bodies. However, to date, no study has investigated systematically the influence of…
This contribution is a brief introduction to nonthermal effects related to modifications of the interatomic potential upon ultrafast excitation of the electronic system of solids, primarily focusing on the swift heavy ion track problem. We…
We present measurements of the growth rates of the principal facet surfaces of ice from water vapor as a function of supersaturation over the temperature range -2 C > T > -40 C. Our data are well described by a dislocation-free…
AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition…
In 1968, Sorin Comorosan first reported a phenomenon wherein irradiation of the substrate of an enzyme reaction, in the crystalline state, for a specific number of seconds could lead to an enhanced aqueous solution reaction rate for the…
This paper is devoted to the study of a degradation of CsI(Tl)crystals scintillation characteristics under irradiation with gamma-quanta at the uniformly distributed absorbed dose up to 3700 rad. The sample set consisted of 25 crystals of…
We report a combined microscopy and spectroscopy study of Au deposited on the Bi2Se3(0001) single crystal surface. At room temperature Au forms islands, according to the Volmer-Weber growth mode. Upon annealing to 100{\deg} C the Au…
Dislocations can climb out of their glide plane by absorbing (or emitting) point defects (vacancies and self-interstitial atoms (SIAs)). In contrast with conservative glide motion, climb relies on the point defects' thermal diffusion and…
We report the effect of 3 MeV proton irradiation on the suppression of the critical temperature $T_{c}$ in Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ single crystals at under-, optimal-, and over-doping levels. We find that $T_{c}$ decreases and…
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the…