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A set of Smoothed Particle Hydrodynamics simulations of the influence of photoionising radiation and stellar winds on a series of 10$^{4}$M$_{\odot}$ turbulent molecular clouds with initial virial ratios of 0.7, 1.1, 1.5, 1.9 and 2.3 and…
At ambient conditions, SiC is known to be resistant to irradiation with swift heavy ions (SHI) decelerating in the electronic stopping regime. However, there is no experimental data on the SiC irradiation at elevated temperatures. To…
Annealing of crystalline multilayers composed of two miscible elements usually causes interfacial mixing of the constituent atoms, possibly leading to the formation of binary alloys at the interfaces. Magnetron sputtered c-Ni/a-Zr…
The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…
The case study of a 32-atoms Si nanocrystallite (NC) embedded in a SiO2 matrix, both crystalline and amorphous, or free-standing with different conditions of passivation and strain is analyzed through ab-initio approaches. The Si32/SiO2…
The properties of the interface between solid and melt are key to solidification and melting, as the interfacial free energy introduces a kinetic barrier to phase transitions. This makes solidification happen below the melting temperature,…
Grazing incidence fast atom diffraction has mainly been investigated with helium atoms, considered as the best possible choice for surface analysis. This article presents experimental diffraction profiles recorded with neon projectile,…
Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great…
The formation of massive stars play a crucial role in galaxies from numerous points of view. The protostar generates a strong ultraviolet radiation field that ionizes its surroundings, and it drives powerful shock waves in the neighbouring…
The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperature. The variation of dose was employed to get dose…
We propose SnBi2Te4 to be a novel candidate material exhibiting temperature (T) mediated transitions between rich topological phases. From a combined theoretical and experimental studies, we find that SnBi2Te4 goes from a low-T topological…
Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…
This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes of generation and growth of surface defects to depend on tilt…
We report the results of computer simulations of epitaxial growth in the presence of a large Schwoebel barrier on different crystal surfaces: simple cubic(001), bcc(001), simple hexagonal(001) and hcp(001). We find, that mounds coarse by a…
We investigate with computer simulations the effect of applying an electric field on the water-to-ice transition. We use a combination of state-of-the-art simulation techniques to obtain phase boundaries and crystal growth rates (direct…
A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are generated…
We investigate the synthesis of 340-nm-thick Sc$_x$Al$_{1-x}$N layers with $0 \leq x \leq 0.35$ on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN nucleation layer under conditions giving rise to…
Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large…
X-ray measurements reveal a crystalline monolayer at the surface of the eutectic liquid Au_{82}Si_{18}, at temperatures above the alloy's melting point. Surface-induced atomic layering, the hallmark of liquid metals, is also found below the…
We present the fourth in a series of papers detailing our SPH study of the effects of ionizing feedback from O--type stars on turbulent star forming clouds. Here, we study the effects of photoionization on a series of initially partially…