Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

Toshiyuki Tabata; Fabien Rozé; Pablo Acosta Alba; Sébastien Halty; Pierre-Edouard Raynal; Imen Karmous; Sébastien Kerdilès; Fulvio Mazzamuto

Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

Applied Physics 2021-11-16 v1

Authors: Toshiyuki Tabata , Fabien Rozé , Pablo Acosta Alba , Sébastien Halty , Pierre-Edouard Raynal , Imen Karmous , Sébastien Kerdilès , Fulvio Mazzamuto

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Abstract

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a SOI layer partially amorphized by arsenic ion implantation and to activate the dopants. In a microsecond scale (~10^-6 s to ~10^-5 s) UV-LA process, monocrystalline solid phase recrystallization and dopant activation without junction deepening is evidenced, thus opening various applications in low thermal budget integration flows.

Keywords

uv laser annealing solid phase recrystallization dopant activation silicon-on-insulator arsenic ion implantation low thermal budget

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@article{arxiv.2111.07577,
  title  = {Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing},
  author = {Toshiyuki Tabata and Fabien Rozé and Pablo Acosta Alba and Sébastien Halty and Pierre-Edouard Raynal and Imen Karmous and Sébastien Kerdilès and Fulvio Mazzamuto},
  journal= {arXiv preprint arXiv:2111.07577},
  year   = {2021}
}

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Accepted Paper for 20th International Workshop on Junction Technology (IWJT2021)

Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

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