Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds (us) strongly limit the vertical heat diffusion. In this work, us UV-LA solid phase epitaxial regrowth (SPER) demonstrated an active carrier concentration surpassing 1 x 10^21 at./cm^-3 in an arsenic ion-implanted silicon-on-insulator substrate. After the subsequent ns UV-LA known for improving CMOS interconnect, only a slight (about 5%) sheet resistance increase was observed. The results open a possibility to integrate UV-LA at different stages of 3D-stacked CMOS.
@article{arxiv.2205.04669,
title = {Microsecond non-melt UV laser annealing for future 3D-stacked CMOS},
author = {Toshiyuki Tabata and Fabien Rozé and Louis Thuries and Sebastien Halty and Pierre-Edouard Raynal and Karim Huet and Fulvio Mazzamuto and Abhijeet Joshi and Bulent M. Basol and Pablo Acosta Alba and Sébastien Kerdilès},
journal= {arXiv preprint arXiv:2205.04669},
year = {2022}
}
Comments
Accepted manuscript for Applied Physics Express (IOP science)