Related papers: Avalanche effects in solid-phase epitaxial crystal…
Silicon nanocrystals are studied by time-resolved fluorescence spectroscopy. After laser excitation the bright and dark exciton ground state levels are populated at random, but subsequently the decay curves reveal a thermalization between…
Scintillation at cryogenic temperatures can give rise to detectors with particle discrimination for rare-event searches such as dark matter detection. We present time-resolved scintillation studies of Caesium Iodide (CsI) under excitation…
Atomistic computer simulations are applied to investigate the atomic structure, thermal stability, and diffusion processes in Al-Si interphase boundaries as a prototype of metal-ceramic interfaces in composite materials. Some of the most…
We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine…
This work extends our Object Kinetic Monte Carlo model for neutron irradiation-induced nanostructure evolution in Fe-C alloys to consider higher irradiation temperatures. The previous study concentrated on irradiation temperatures < 370 K.…
In this study, the microstructure changes of Ti3SiC2 MAX phase material induced by helium irradiation and evolution with a sequence of different helium irradiation doses of 5E15, 1E16, 5E16 and 1E17cm-2 at room temperature (RT) were…
Throughout a typical Earth orbit a satellite is constantly bombarded by radiation with trapped and solar protons being of particular concern as they gradually damage the focal plane devices throughout the mission and degrade their…
The kinetics of E' centers induced in silica by 4.7eV laser irradiation was investigated observing in situ their optical absorption band at 5.8 eV. After exposure the defects decay due to reaction with diffusing molecular hydrogen of…
$Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the…
An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of…
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied…
We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular dynamics simulations. The <111>-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other <111> directions as the…
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…
Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the…
Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si…
In this series of papers, we model the formation and evolution of the photoionized region and its observational signatures during massive star formation. Here we focus on the early break out of the photoionized region into the outflow…
Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved and core-level photoemission. Fe, Nb and Ag were evaporated onto Bi1.5Sb0.5Te1.7Se1.3 (BSTS)…
Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder,…
Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each…
Thin foils of the double solid solution $(Zr{_0.5},Ti{_0.5})_{2}(Al_{0.5},Sn_{0.5})C$ MAX phase were in situ irradiated in a transmission electron microscope (TEM) up to a fluence of $1.3\times10^{17} ions$ $cm^{-2}$ (${\sim}$ 7.5 dpa),…