Related papers: Avalanche effects in solid-phase epitaxial crystal…
Effects of columnar defects created by 320 MeV Au irradiation on 2H-NbSe2 single crystals with a dose equivalent matching field up to 16 T were studied. Critical temperature is found to be suppressed almost linearly at a rate of 0.07 K/T.…
In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125-230 K using a variable-temperature scanning tunneling…
Within the framework of the local electron density functional theory, an ab-initio method is proposed that takes into account the self-interaction energy correction (SIC) for the crystal potential. The principle of dividing the unit cell…
Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution…
Transport characteristics of single crystal bismuth films on Si(111)-7 \times 7 are found to be metallic or insulating at temperature below or above TC, respectively. The transition temperature TC decreases as the film thickness increases.…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…
Stacking multiple SiSiGe channels in advanced logic devices faces severe thermal budget accumulation, which degrades interfaces via Ge-Si interdiffusion and strain relaxation.This strategy lowers the Ge diffusion coefficient to 5.6-7% of…
We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A…
A stack of titanium foils was irradiated with 136 MeV 136Xe to study microstructure damage and phase stability of titanium upon irradiation. X- ray diffraction, scanning electron microscopy/energy dispersive spectroscopy and atomic force…
During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of…
We propose a new type of morphological instability in the diffusion-limited growth of faceted crystals from the vapor phase that can explain the formation of thin ice plates at temperatures near -15 C. The instability appears when the…
A combined experimental and computational study of the recrystallization process induced by swift heavy ions in pre-damaged silicon carbide crystals was reported in a recent paper by Debelle et al. [Phys. Rev. B 86, 100102(R) (2012)]. In…
The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from…
Grazing incidence fast atom diffraction at crystal surfaces (GIFAD or FAD) has demonstrated coherent diffraction both at effective energies close to one eV ($\lambda_\perp\approx$ 14 pm for He) and at elevated surface temperatures offering…
Samples of amorphous MgSiO_3 annealed at temperature steps leading up to their crystallisation temperature show a rise in photoluminescence activity, peaking at ~450C. The photoluminescence band has a main peak at 595nm and a weaker peak at…
The main accretion phase of protostars is characterized by the ejection of material in the form of jets/outflows. External UV irradiation can potentially have a significant impact on the excitation conditions within these outflows.…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron…
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed, both with…
The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered…