Related papers: Test of a fine pitch SOI pixel detector with laser…
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…
This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation.…
We developed a beam telescope system comprising five layers of 300-$\mu$m-thick INTPIX4NA monolithic pixel sensors with each pixel size of 17 $\mu$m square. The sensors were fabricated using silicon-on-insulator (SOI) technology. The…
This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing…
SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor…
In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 {\mu}m CMOS fully depleted SOI process…
The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low…
A pixelated silicon detector, developed originally for particle physics experiments, was used for a beam profile measurement of a Co-60 irradiator in a water phantom. The beam profile was compared to a profile measured with a pinpoint…
We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed…
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…
0.2 um fully-depleted SOI technology has been developed a for X-ray pixel detectors. To improve the detector performance, some advanced process technologies are developing continuously. To utilize the high resistivity FZ-SOI, slow ramp up…
Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated…
3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…
The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…
For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High…
This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer…
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…
The two innermost layers of the ALICE inner tracking system are instrumented with silicon pixel detectors. Single chip assembly prototypes of the ALICE pixels have been tested in high energy particle beams at the CERN SPS. Detection…
Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n+/n sensors with oxygenated silicon substrates. The experimental…