Related papers: Discrete Charging in Polysilicon Gates of Single E…
We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.
Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…
A small scale bipolar transistor with polysilicon emitter will, depending on the emitter window size, display suppression of the hole tramsport due to single electron effects. In this paper the resulting base current suppression is computed…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top…
Low-temperature transport spectroscopy measurements on a quantum dot lithographically defined in a multiwall $\mathrm{MoS}_2$ nanotube are demonstrated. At $T=300\,\mathrm{mK}$, clear Coulomb blockade is observed, with charging energies in…
We study charge transport through a floating mesoscopic superconductor coupled to counterpropagating fractional quantum Hall edges at filling fraction $\nu=2/3$. We consider a superconducting island with finite charging energy and…
We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
The charge localization of single electrons on mesoscopic metallic islands leads to a suppression of the electrical current, known as the Coulomb blockade. When this correction is small, it enables primary electron thermometry, as it was…
We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade…
We report measurements on single-electron pumps, consisting of two metallic islands formed by three tunnel junctions in series. We focus on the linear-response conductance as a function of gate voltage and temperature of three samples with…
We have studied low-temperature single electron transport through ultra-small Si quantum dots. We find that at low temperatures Coulomb blockade is partially lifted at certain gate voltages. Furthermore, we observed an enhancement of…
Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are…
We study the dissipation in a system consisting of a small metallic island coupled to a gate electrode and to a massive reservoir via single tunneling junction. The dissipation of energy is caused by a slowly oscillating gate voltage. We…
The electrostatic behaviour of an 1,3-Cyclobutadiene (C$_{4}$H$_{4}$) based Single Molecular Transistor (SMT) has been investigated using the first principle calculation based on Density functional Theory and non-equilibrium Green's…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…