Related papers: Discrete Charging in Polysilicon Gates of Single E…
We study the transport properties of a quantum dot (QD) with highly resistive gate electrodes, and show that the QD displays a quantum phase transition analogous to the famous dissipative phase transition first identified by S. Chakravarty…
An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated…
We describe two experiments to study the influence of fluctuations in the electron charge on the transport properties of a quantum dot. First, we scan a device from single- to double quantum-dot behavior by varying the conductance of a…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
Transport properties of granular systems are governed by Coulomb blockade effects caused by the discreteness of the electron charge. We show that, in the limit of vanishing mean level spacing on the grains, the low-temperature behavior of…
We develop a method of theoretically investigating the charge, energy and heat transport in the presence of the charge Kondo correlations. The Coulomb blockade oscillations of heat conductance in the single electron transistor exhibiting…
While Single Molecule Transistors have been employed in laboratory research for a number of years, there remain many details related to charge transport that have yet to be delineated. We have used the technique of electromigration to…
We show that charge fluctuation processes are crucial for the nonlinear heat conductance through an interacting nanostructure, even far from a resonance. We illustrate this for an Anderson quantum dot accounting for the first two leading…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
We use a simultaneous flow of ethylene and hydrogen gases to grow single wall carbon nanotubes by chemical vapor deposition. Strong coupling to the gate is inferred from transport measurements for both metallic and semiconducting tubes. At…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…
We report low-temperature transport experiments on single-wall nanotubes with metallic leads of varying contact quality, ranging from weak tunneling to almost perfect transmission. In the weak tunneling regime, where Coulomb blockade…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We investigate coherent transport in Si:MOSFETs with nominal gate lengths 50 to 100nm and various widths at very low temperature. Independent of the geometry, localized states appear when G=e^{2}/h and transport is dominated by resonant…
We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the…
We propose a cyclic refrigeration principle based on mesoscopic electron transport. Synchronous sequential tunnelling of electrons in a Coulomb-blockaded device, a normal metal-superconductor single-electron box, results in a cooling power…
We review the mechanisms of low-temperature electron transport across a quantum dot weakly coupled to two conducting leads. Conduction in this case is controlled by the interaction between electrons. At temperatures moderately lower than…
We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes…
Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic field or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the…
Investigation of electrical conduction in polysilicon nanowires (polySiNW) with nanograins (5 to 20nm), based on Monte Carlo (MC) simulations and electrical measurements from 4K to 300K are presented. Some irregular Coulomb Oscillations…