Related papers: Discrete Charging in Polysilicon Gates of Single E…
We report finite-bias characteristics of electrical transport through phosphorus donors in silicon nanoscale transistors, in which we observe inelastic-cotunneling current in the Coulomb blockade region. The cotunneling current appears like…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent…
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on…
We study the transport through a quantum dot coupled to two leads by single-mode point contacts. The linear conductance is calculated analytically as a function of a gate voltage and temperature T in the case when transmission coefficients…
We investigate transport in a three-terminal graphene quantum dot. All nine elements of the conductance matrix have been independently measured. In the Coulomb blockade regime accurate measurements of individual conductance resonances…
We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances…
We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…
We analyze cotunneling transport through two quantum dots in series weakly coupled to external ferromagnetic leads. In the Coulomb blockade regime the electric current flows due to third-order tunneling, while the second-order…
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our…
Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated…
Recently, Coulomb blockade physics was observed at room temperature in a carbon nanotube single-electron transistor (H. W. Ch. Postma, et. al., Science 293, 76 (2001)). In this work, we suggest that these devices may be promising for…
The linear and nonlinear transport properties of the single-electron transistor at the degeneracy point are investigated for the case of weak single-mode tunnel junctions. Two opposing scenarios are considered, distinguished by whether or…
We present electronic transport measurements of a single wall carbon nanotube quantum dot coupled to Nb superconducting contacts. For temperatures comparable to the superconducting gap peculiar transport features are observed inside the…
Suspended carbon nanotubes are known to support self-driven oscillations due to electromechanical feedback under certain conditions, including low temperatures and high mechanical quality factors. Prior reports identified signatures of such…
We study the Coulomb blockade in a chaotic quantum dot connected to a lead by a single channel at nearly perfect transmission. We take into account quantum fluctuations of the dot charge and a finite level spacing for electron states within…
Disordered granular systems, at temperatures where charging effects are important, are studied, by means of an effective medium approximation. The intragrain charging energy leads to insulating behavior at low temperatures, with a well…
In the ring-shaped tunnel-junction array with four islands, the secondary Coulomb blockade gap in a low bias-voltage range is observed in the I-V characteristics. We attribute its appearance to the unique topology of the array which induces…
We have fabricated and measured superconducting single-electron transistors with Al leads and Nb islands. At bias voltages below the gap of Nb we observe clear signatures of resonant tunneling of Cooper pairs, and of Coulomb blockade of the…
We study a topological superconductor island with spatially separated Majorana modes coupled to multiple normal metal leads by single electron tunneling in the Coulomb blockade regime. We show that low-temperature transport in such Majorana…