English

Negative differential resistance due to single-electron switching

Mesoscale and Nanoscale Physics 2009-10-31 v1
Authors: C. P. Heij , D. C. Dixon , P. Hadley , J. E. Mooij
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Abstract

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Alx_{x}Oy_{y} islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

Cite

@article{arxiv.cond-mat/9809272,
  title  = {Negative differential resistance due to single-electron switching},
  author = {C. P. Heij and D. C. Dixon and P. Hadley and J. E. Mooij},
  journal= {arXiv preprint arXiv:cond-mat/9809272},
  year   = {2009}
}

Comments

3 pages, 3 figures; submitted to APL

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