We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that, the NDR feature only presents with appropriate structural parameters for the massless case and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter.
@article{arxiv.1210.2033,
title = {Negative differential resistances with back gate-controlled lowest operation windows in graphene double barrier resonant tunneling diodes},
author = {Yu Song and Han-Chun Wu and Yong Guo},
journal= {arXiv preprint arXiv:1210.2033},
year = {2013}
}